Wireless Sensor Network Function Composition Based on Ultra Low Power Digital Circuit Composition

Abstract

because the CMOS technology continues to scale down into the nano-scale regime, strength of the circuit with relation to method variation and soft error have become major obstacles for circuit designers. Storage components (SRAM, flip-flops) are unit significantly at risk of method variation and soft errors. Thus, during this work, we've targeted on storage components – to boost the yield loss in SRAM as a result of method variations and to style a soft error tolerant flip-flop. SRAMs area unit significantly at risk of failures as a result of method variation leading to reduced yield. The most drawbacks with SRAM is that the conflicting needs for scan stability and write ability. During this work, we tend to propose styles to beat conflicting trade-off between scan and write stability. Moreover, new SRAM cells, specifically 11TSRAM, PMOS access junction transistor SRAM, area unit projected with capability of performing at near threshold voltages, properly. The impact of body-biasing on SRAM cell is explored to indicate enhancements from body-biasing in sub-threshold regions. Results show a minimum of half-hour improvement in scan noise margin for projected SRAM cells whereas write margin is improved. Moreover, to beat short channel impact, completely different candidate junction transistor structures are investigated to interchange the majority MOSFETs. Among them, FinFET is taken into account to be a promising candidate for scaled CMOS devices in sub-22-nm technology nodes. during this work, by introducing a replacement device, the scan and write stability for SRAM is improved by two hundredth and 11th of September severally, whereas performance is improved by 56%compared to traditional styles.we study the double-gate FinFET SRAM technology-circuit style area to grasp the interaction of device short-channel-effect (SCE), SRAM area, interval, soft error immunity, stability beneath method variations and outpouring.