Positron Life time Study of CdSe and CdT

Abstract

The positron annihilation studies have been presented on II-VI group polycrystalline CdSeand CdTe  compound semiconductor. Samples were prepared in form of 1 mm thick pellets having 12 mm diameter using hydraulic pressure at 3 ton. These pellets annealed at different temperature under vacuum (10-5 torr) then characterized using positron annihilation spectroscopy and X-ray diffraction (XRD) techniques after and before annealing. Structural properties have been observed for both the pristine as well as annealed samples. It has been found that concentration of defects is decreased and crystallinity of samples is increased after annealing.