Design of Non-Volatile memory with fast and low power amplifier and writing circuit based on VCMA technique

Abstract

   A high-speed and low-power pre-read and write sense amplifier (PWSA) is presented for magneto resistive random access memory (MRAM). The sense amplifier incorporates a writing circuit for MRAM bits switched magnetic tunnel junction (MTJ). By combining read and write functions in a single power-efficient circuit, the PWSA allows for fast read and write operations while minimizing the bit error rate (BER) after data programming. Using the pre-read and comparison steps in the data program operation, we are able to reduce write power consumption under random data input conditions. By using the voltage controlled magnetic anisotropy (VCMA) effect for precessional switching, more than 10x reduction of write power and transistor size both in the memory cell and the write circuit is achieved, compared to using the spin transfer torque (STT) effect by the modified differential amplifier with XOR and XNOR gates. In this paper achieved less area, reducing the power and modified circuit for xnor by using MOS technology to compare the data of S Latch and D Latch.