Impact of TMD’s On Doping Less TFET’s

Abstract

Today’s world is technologically emerging world. In which everything is technology oriented. In this changing environment every well equipped system need to be very efficient. In this new era of electronics industry there is need of devices which are having high speeds and also high efficiency in-turn having less leakage current. Up to some extent this can be achieved by using a new generation 2-D material named Transition metal Dichalcogenides (TMD’s). These are rigorously researched now days due to their excellent semi conductor properties and also temperature sensitivity. Not only in the area of semiconductor devices, these TMD’s are also applicable in many areas like Optoelectronic devices, Gas sensing devices, Energy storage devices etc this paper studies about various properties of TMD’s and also what is the impact of them on the Doping less TFET.