Dynamic Composite Resistive Switching Characteristics of Multiple Interconnected Memristors

Abstract

In novel technologies, the memristive technology is most promising one it, fulfils nanoscale requirements - scaling down to less than 10 nm, low power consumption, low energy switching characteristics and nonvolatile nature. Memristor became one of the basic fundamental building unit for designing logic circuits and memory devices. Memristive devices are envisioned to provide new functionalities at the nanoscale based on the possibility to tune their resistivity continuously. More researchers focusing only the modelling of the memristor and a very few papers published on the composite behavior of memristors but not completely explained. Important efforts are still needed to understand the switching mechanism. In this paper, we analysis the composite memristive voltage-dependent switching behavior by considering memristor as a single structural element. Serial and parallel connected memristors composite characteristics are investigated because of its various application of as basic memory element in crossbar architectures. Complementary Resistive Switch (CRS) and Anti-parallel Resistive Switch (ARS) are the composite memristors use in logic circuit design and memory circuit elements