Analysis of Intrinsic Factors Which Influencing the Temperature Dependence of the Id-Vds-Vgs Characteristics of Heterostructure Tunnel FETS Based On GaSb/InAs Tunneling Junctions

Abstract

This paper provides an analysis of the intrinsic factors influencing the temperature dependence of the I_d −V_ds −V_gs characteristics of heterostructure Tunnel FETs based on GaSb/InAs tunneling junctions. The temperature dependence of energy bandgap, quantum confinement energy-shifts, and Fermi level position are quantified. There is significant cancellation among the various effects, such that the overall I_d− V_ds− V_gscharacteristics are expected to have remarkably small temperature dependence, of the order of 10 − 20 mV shift in V_gs over the temperature range of 0 − 125 ^◦C. Considerations are also discussed for representative extrinsic effects such as trap-assisted tunneling, which affect many experimental devices to a variable extent.