Effect of Indium Nanocrystals on the Structural and Optical Properties of Gallium Arsenid

Abstract

In this study, the structural and optical properties of indium (In) nanocrystals doped GaAs using Sol-gel method at different concentrations were investigated via X-ray diffraction technique, Transmission electron microscope and ultra violet spectroscopy. From the results, it can be shown that the InGaAs films possess polycrystalline structure with (220) crystallographic direction for InAs and (002) crystallographic direction for GaAS. In the absorbance-wavelength spectra, it is shown that absorbance increases with increase in concentration of dopant with corresponding wavelength except at 0.2% concentration which shows a blue shift of the first excitons absorption peak at 260 nm. Correspondingly the transmittance spectra decrease with the increase in the concentration except for 0.2% of InNCs doped GaAs that shows a decrease due to the increase in the scattering of the photon by the crystals. Also, there was a decrease in band gap energy as a result of introducing InNCs into the host material.