High speed silicon Mach Zehnder modulator
Abstract
It is difficultto realize high speed optical intensity modulation in semiconductor (Si) as a result ofthe fabricdoesn't exhibit any considerable electro-optic impact . We have a tendency togiven our initial device stylesupported the free-carrier plasma dispersion impactwhereby the part shifting parts of a Mach Zehnder measuring instrument (MZI) square measure metal-oxide-semiconductor (MOS) capacitors embedded in Si rib waveguides.
Keywords
High speed; silicon Mach; Zehnder modulator
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