Design A Semiconductor Nanowire Development With Performance Limits

Abstract

Semiconductor nano wires are the unique materials that explore the phenomena of nanoscale. Basically, nano wires are extensively used in the properties of electronic, mechanical and electrochemical. By using the top down techniques we can yield the device performance in an excellent way. In this first basic nanowire field-effect transistor structures are introduced and these are obtained from the results of both p-channel and n-channel homogenous composition nanowires. Next one is about the description of nanowire heterostructures; it consists of certain limiting factors that can demonstrate the performance of nanowire transistor. Third one is to fabricate the devices and circuits in the organization of nanowires. Fourth one is to introduce the concept of crossbar nanowire circuits. This circuit gives the results for both the transistors and non volatile circuit devices. It not only discusses about the result but also describes the unique approaches of multiplexing and de multiplexing. These unique approaches are enabled by the coded nanowire. Coming to fifth one, in this we discuss about the application of the silicon thin flim narrow wire array transistors. Basically, silicon thin flims are fabricated on the foreign substrates like glass and stainless steel. These arrays are of low cost and describe the results for high frequency ring oscillator and transparent device arrays. At last we discuss about the 3-D heterogeneous integration, it is a unique approach which enables the multi functional nano wires in the bottom up approach.