A single ended dynamic feedback control 8T sub threshold SRAM cell

Abstract

In this paper an 8T RAM cell with high information security that works on ULV is proposed. The proposed cell's zone is twice as that of 6T. The proposed 8T cell has high solidness and can be worked at ULV of 200–300 mV power supplies. The upside force utilization of the proposed 8T cell empowers that it should be utilized for battery worked SoC plan. Future and utilizations of the proposed 8T cell can possibly be in low/ULV and medium recurrence operation like neural sign processor, subthreshold processor, wide-working extent IA-32 processor, quick Fourier change centre, and low voltage reserve operation. At last it can be observed that proposed system gives better results compare to existed one.