Experimental Study of Electronic Transporte in TiO2/Si Junctions

Abstract

In this work, a  heterojunction TiO2 on Si base  has been made  by use  the  D.C magnetron sputtering  method with Ti target and oxygen plasma.  The film was deposited on Si wafer and then undergone to the annealing process at various annealing temperatures were employed to assess film properties. The capacitance  with reverse bias has been measured  as a function of bias voltage at frequency 10 kHz,  and  these measurements have indicated  the width of the depletion layer (W) surges with increasing of annealing temperature. The current–voltage characteristic

It turned out through the current–voltage graph of TiO2/Si heterojunction the forward current at dark changes with change of  applied voltage, in demeanor concordant with recombination-tunneling model.

   The results have shown that the dark current rises with growth of Ta. Also under  illumination condition its clear to show there is  a positive correlation  relationship between the photocurrent and Ta.